valence band造句
例句与造句
- The reason is that their valence band is full of electrons , which obstructs current flow
因为它们的价带填满了电子，使电流无法流动。 - In the band structure , one band that is completely filled with electrons is termed valence band
在能带结构中，完全填满电子的带被称为价带。 - Effective masses at the top of valence band and at the bottom of conduction band are deduced from the band structure
价带顶和导带底的有效质量从计算得到的能带结构中求出。 - The highest - energy band containing electrons is called the valence band , and the next higher one is the conduction band
填有电子而能量最高的能带称为价带，相邻的更高能带称为导带。 - 2 . from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented . the following results can be extracted
2铒硅( 001 )界面、表面及铒硅化物最初形成过程研究首先利用同步辐射光电子能谱方法研究了室温下铒在硅( 001 )表面的淀积和退火过程。 - It's difficult to find valence band in a sentence. 用valence band造句挺难的
- As a result , the fermi level at the surface will shift towards the valence band maximum ( vbm ) . accordingly the band bending increases , and the surface depletion layer thickness enhances , therefore , the channel thickness reduces . this is the main factor resulting in the decrease of saturated drain - source current
表面费米能级向价带顶移动，能带弯曲加剧，肖特基势垒高度增加，表面耗尽层变厚，导电沟道变窄，是导致源漏饱和电流下降的主要因素。 - A model of the interface state density distribution near by valence band is presented , and the dependence of the threshold voltage on temperature , the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics , transfer characteristics and effective mobility of sic pmosfets are analyzed . thirdly , the output characteristics and the drain breakdown characteristics are modeled with the procedure medici . the output characteristics in the room temperature and 300 ? are simulated , and the effects of gate voltage . contact resistance , interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一个价带附近的界面态分布模型，用该模型较好地描述了sicpmos器件阈值电压随温度的变化关系、 c - v特性曲线以及亚阈特性曲线；分析了源漏寄生电阻对sicpmos器件输出特性、转移特性以及有效迁移率的影响；论文中用模拟软件medici模拟了sicpmos器件的输出特性和漏击穿特性，分别模拟了室温下和300时sicpmos器件的输出特性，分析了栅电压、接触电阻、界面态以及其他因素对sicpmos击穿特性的影响。 - We also have analyzed the photoluminescence ( pl ) spectra of some zno films , it turns out that the emission of ultraviolet light comes from the radiative recombination of excitons within nano - crystal energy band - gap , and the pl peaks move to smaller wavelength because zn are substituted by fe , co , and cu , which cause the size of the film grains smaller and the effective band - gap bigger . the red emission of zno films is due to , on the one hand , decrease of the film grains size which causes the emission intensity smaller and smaller until it disappears abruptly , on the other hand , the transition of electrons from deep donor level of the oxygen vacancies to the valence band
另外，我们还对薄膜光致发光性质进行了分析和研究，结果表明：纳米结构zno薄膜的紫外发光来源于带间激子的辐射复合发光， pl谱的带边发射峰发生蓝移是由于fe 、 co 、 cu对zn的替代使薄膜粒子的尺寸减小，使薄膜的有效带隙增宽； zno薄膜的红色发光，一方面是zno颗粒尺寸的减少，带间的激子发射峰越来越弱直至猝灭，另一方面主要是与zno晶格中的o空位有关，由深能级复合发光引起红光发射。
